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GS66516B-MR

Part No GS66516B-MR
Manufacturer Infineon Technologies
Catalog FETs - Single
Description GS66516B-MR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs
Mfr Infineon Technologies
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 32mOhm @ 18A, 6V
Vgs(th) (Max) @ Id 1.3V @ 14mA
Gate Charge (Qg) (Max) @ Vgs 12.1 nC @ 6 V
Vgs (Max) +7V, -10V
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 400 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Ultra Librarian 3D Model Ultra Librarian GS66516B-MR CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $95.5734 $95.5734
2+ $92.5867 $185.1734
3+ $89.6000 $268.8000
4+ $86.6134 $346.4536
5+ $77.6534 $388.2670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20 pieces
Order Increment : 1 pcs
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