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IAUS300N08S5N012TATMA1

Part No IAUS300N08S5N012TATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 300A HDSOP-16-2 / N-Channel 80 V 300A (Tj) 375W (Tc) Surface Mount PG-HDSOP-16-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 300A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs 231 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16250 pF @ 40 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-16-2
Package / Case 16-PowerSOP Module
Standard Package 1,800
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1342145-IAUS300N08S5N012TATMA1
Ultra Librarian 3D Model Ultra Librarian IAUS300N08S5N012TATMA1 CAD Model

Description

The IAUS300N08S5N012TATMA1 is a MOSFET (Metal Oxide) N-Channel FET that is part of the OptiMOS™ 5 series.

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Series: OptiMOS™ 5
  • Drain to Source Voltage (Vdss): 80V
  • Power Dissipation (Max): 375W (Tc)
  • Drive Voltage (Rds On, Vgs): 6V, 10V
  • Continuous Drain Current (Id) @ 25°C: 300A (Tj)
  • Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
  • Input Capacitance (Ciss) @ Vds: 16250 pF @ 40V
  • Gate Charge (Qg) @ Vgs: 231 nC @ 10 V
  • Package / Case: 16-PowerSOP Module
  • Operating Temperature: -55℃ ~ 175℃ (TJ)
  • Manufacturer: Infineon Technologies

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