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IDH16G65C5XKSA2 Real Image
Same model may have multiple batches, images only for reference.

IDH16G65C5XKSA2

Part No IDH16G65C5XKSA2
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTKY 650V 16A TO220-2-1  /  Diode Silicon Carbide Schottky 650 V 16A (DC) Through Hole PG-TO220-2-1
Datasheet
IDH16G65C5XKSA2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr Infineon Technologies
Series CoolSiC™+
Package Tube
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 16A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 16 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 200 µA @ 650 V
Capacitance @ Vr, F 470pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2-1
Operating Temperature - Junction -55°C ~ 175°C
Base Product Number IDH16G65
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Names SP001632392
Standard Package 50
Win Source Part Number 1002001-IDH16G65C5XKSA2
Ultra Librarian 3D Model Ultra Librarian IDH16G65C5XKSA2 CAD Model

Description

The Infineon Technologies IDH16G65C5XKSA2 is a CoolSiC+ silicon carbide Schottky diode that has a voltage - DC reverse (Vr) (Max) of 650V and an average rectified current (Io) of 16A (DC).

  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 16A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200μA @ 650V
  • Capacitance @ Vr, F: 470pF @ 1V, 1MHz
  • Operating Temperature: -55°C to 175°C
  • ECCN: EAR99
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2

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