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Same model may have multiple batches, images only for reference.
IDW12G65C5 Real Image
Same model may have multiple batches, images only for reference.

IDW12G65C5

Part No IDW12G65C5
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 12A TO247-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Series CoolSiC™+
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 12 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 500 µA @ 650 V
Capacitance @ Vr, F 360pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-41
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 1 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 602536-IDW12G65C5
Ultra Librarian 3D Model Ultra Librarian IDW12G65C5 CAD Model

Description

The CoolSiC™+ 602536-IDW12G65C5 is a high-performance silicon carbide (SiC) Schottky diode.

  • Maximum DC Reverse Voltage: 650V
  • Average Rectified Current: 12A
  • Technology: CoolSiC™+
  • Recovery Time: No recovery time greater than 500mA
  • Forward Voltage: 1.7V @ 12A
  • Reverse Recovery Time: 0ns
  • Capacitance: 360pF @ 1V and 1MHz
  • Operating Temperature: -55°C to 175°C
  • Package Type: TO-247-3
  • Manufacturer: Infineon Technologies

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