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IGB03N120H2

Part No IGB03N120H2
Manufacturer Infineon Technologies
Description HighSpeed 2-Technology
Sample
Rohs State Need to verify
ECAD Module
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RoHS State Request Verification
Manufacturer Infineon Technologies
Win Source Part Number 1185259-IGB03N120H2
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IGB03N120H2 CAD Model

Description

The IGB03N120H2 is a medium-popularity MOSFET transistor manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 120V
  • Continuous Drain Current: 3.1A
  • On-State Resistance: 0.03 ohms
  • Gate-Source Threshold Voltage: 4V
  • Package: Tube
  • Applications: Power supplies and motor control circuits
  • RoHS State: Pending verification

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $40.3395 $80.6790
4+ $33.0988 $132.3952
6+ $32.0651 $192.3906
8+ $31.0302 $248.2416
10+ $29.9965 $299.9650
13+ $26.8930 $349.6090
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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