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Same model may have multiple batches, images only for reference.
IHY20N120R3
Same model may have multiple batches, images only for reference.

IHY20N120R3

Part No IHY20N120R3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 40A 310W TO247HC-3
Datasheet
IHY20N120R3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 40A
Pulsed Collector Current 60A
Collector-emitter saturation voltage(Max) 1.7V @ 15V, 20A
Maximum Power Dissipation 310W
Total Switching Energy(Ets) 950μJ (off)
Input Type Standard
Gate Charge 211nC
Turn-on and Turn-off delay time -/387ns
Testing Conditions 600V, 20A, 15 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247HC-3
Win Source Part Number 040613-IHY20N120R3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IHY20N120R3 CAD Model

Description

The Infineon Technologies IHY20N120R3 is a trench IGBT type device with a collector-emitter breakdown voltage of 1200V.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Collector Current: 40A
  • Maximum Power Dissipation: 310W
  • Packaging: PG-TO247HC-3
  • Temperature Range: -40°C to 175°C (TJ)
  • Mounting: through hole
  • Gate Charge: 211nC
  • Pulsed Collector Current: 60A
  • Collector-Emitter Saturation Voltage (Max): 1.7V @ 15V, 20A
  • Popularity: medium
  • Supply and Demand Status: balanced.

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