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Same model may have multiple batches, images only for reference.
IKA08N65F5 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKA08N65F5

Part No IKA08N65F5
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IKA08N65 - DISCRETE IGBT WITH AN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TRENCHSTOP™
Package Bulk
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 10.8 A
Current - Collector Pulsed (Icm) 24 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 8A
Power - Max 31.2 W
Switching Energy 70µJ (on), 20µJ (off)
Input Type Standard
Gate Charge 22 nC
Td (on/off) @ 25°C 10ns/116ns
Test Condition 400V, 4A, 48Ohm, 15V
Reverse Recovery Time (trr) 41 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 1376586-IKA08N65F5
Ultra Librarian 3D Model Ultra Librarian IKA08N65F5 CAD Model

Description

The Infineon Technologies IKA08N65F5 is a single IGBT transistor from the TRENCHSTOP™ series.

  • Package: TO-220-3
  • Mounting Type: Through-Hole
  • Temperature Range: -40°C to 175°C
  • Reverse Recovery Time (trr): 41ns
  • Maximum Collector Current (Ic): 10.8A
  • Maximum Collector-Emitter Breakdown Voltage: 650V
  • Maximum Power Dissipation: 31.2W
  • Input Type: Standard
  • REACH: Unaffected
  • Test Condition: 400V, 4A, 48Ohm, 15V
  • Vce(on): 2.1V @ 15V and 8A
  • Switching Energy (on): 70μJ
  • Switching Energy (off): 20μJ
  • Gate Charge: 22nC
  • Td (on/off) @ 25°C: 10ns/116ns

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Availability: 930 pieces
MOQ: 23 pcs
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