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Same model may have multiple batches, images only for reference.
IKP01N120H2XKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IKP01N120H2XKSA1

Part No IKP01N120H2XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 3.2A 28W TO220-3
Datasheet
IKP01N120H2XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 3.2A
Pulsed Collector Current 3.5A
Collector-emitter saturation voltage(Max) 2.8V @ 15V, 1A
Maximum Power Dissipation 28W
Total Switching Energy(Ets) 140μJ
Input Type Standard
Gate Charge 8.6nC
Turn-on and Turn-off delay time 13ns/370ns
Testing Conditions 800V, 1A, 241 Ohm, 15V
Reverse Recovery Time (trr) 83ns
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3
Win Source Part Number 1045274-IKP01N120H2XKSA1
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Consumer Electronics, Portable Devices, Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian IKP01N120H2XKSA1 CAD Model

Description

The Infineon Technologies IKP01N120H2XKSA1 is a PG-TO220-3 IGBT that is designed for use in discrete semiconductor products.

  • VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 3.2A
  • Maximum Power Dissipation: 28W
  • Operating Temperature: -40°C to 150°C (TJ)
  • Package: PG-TO220-3
  • Packaging: Tube/Rail
  • Supply and Demand Status: Sufficient
  • Used In: Consumer electronics, portable devices, power management, and industrial applications.

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