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Same model may have multiple batches, images only for reference.
IMBG65R260M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG65R260M1HXTMA1

Part No IMBG65R260M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET PG-TO263-
Datasheet
IMBG65R260M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202810-IMBG65R260M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
Technology SiCFET (Silicon Carbide)
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-12
Ultra Librarian 3D Model Ultra Librarian IMBG65R260M1HXTMA1 CAD Model

Description

The Infineon Technologies 1202810 is a high-power SiCFET (Silicon Carbide) MOSFET.

  • Technology: SiCFET (Silicon Carbide)
  • Series: CoolSIC™ M1
  • Power Dissipation: 65W (Tc)
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: PG-TO263-7-12
  • Mounting Type: Surface Mount
  • Product Status: Active
  • Packaging: Tape & Reel (TR) Cut Tape (CT)

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64+ $2.3597 $151.0208
88+ $2.2835 $200.9480
114+ $2.2074 $251.6436
152+ $1.9791 $300.8232
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Availability: 1,000 pieces
MOQ: 17 pcs
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