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IMW65R027M1HXKSA1

Part No IMW65R027M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET 650V NCH SIC TRENCH
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202686-IMW65R027M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series CoolSIC™ M1
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47A (Tc)
Supplier Device Package PG-TO247-3-41
Ultra Librarian 3D Model Ultra Librarian IMW65R027M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSIC™ M1 is a high-performance N-Channel SiCFET (Silicon Carbide Field Effect Transistor) designed for various applications in the field of discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 650V
  • Maximum Continuous Drain Current (Id) @ 25°C: 47A
  • Series: CoolSIC™
  • Supplier Device Package: PG-TO247-3-41

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