The supply and demand status is limited. It is a MOSFET technology with an N-Channel polarity. The power dissipation (Max) is 39W (Tc). It is a discrete semiconductor product with a packaging of tube/rail and a mounting of through hole. The case/package is PG-TO220-FP with a dimension of TO-220-3 Full Pack. The drain-source breakdown voltage is 80V and the continuous drain current @ 25°C is 60A (Tc). The gate-source threshold voltage is 3.5V @ 90μA. The max gate charge is 69nC @ 10V and the max input capacitance is 4750pF @ 40V. The maximum gate-source voltage is ±20V and the maximum Rds On @ Id,Vgs is 5.7 mOhm @ 60A, 10V.