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IPB049N06L3G

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Part No	IPB049N06L3G
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	N-CHANNEL POWER MOSFET
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8400 pF @ 30 V
Power Dissipation (Max)	115W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package	400 pcs
MSL Level	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	874696-IPB049N06L3G
Ultra Librarian 3D Model	Ultra Librarian IPB049N06L3G CAD Model

Alternative Products

Description

The 874696-IPB049N06L3G is a N-Channel MOSFET (Metal Oxide) transistor from the OptiMOS™ 3 series by Infineon Technologies.

Designed for: Use in discrete semiconductor products, specifically in transistors and FETs
Drain to Source Voltage (Vdss): 60V
Continuous Drain Current (Id): 80A @ 25°C
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Package Type: Bulk
Standard Package: 400 pcs
Mounting Type: Surface Mount
Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
Operating Temperature Range: -55°C to 175°C
Status: Active

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