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IPB065N03L G

Part No IPB065N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO-263-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 2400pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017317-IPB065N03L G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB065N03L G CAD Model

Description

The Infineon Technologies IPB065N03L G is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 30V and Continuous Drain Current of 50A @ 25°C.

  • Max Rds On: 6.5 mOhm @ 30A and 10V
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Max Gate Charge: 23nC @ 10V
  • Packaging: PG-TO263-2
  • Operating Temperature: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6540 $57.8900
90+ $1.3571 $122.1390
135+ $1.3144 $177.4440
185+ $1.2717 $235.2645
235+ $1.2301 $289.0735
315+ $1.1030 $347.4450
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Availability: 31,000 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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