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Same model may have multiple batches, images only for reference.
IPB075N04LG Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB075N04LG

Part No IPB075N04LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series OptiMOS™ 3
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 25 V
Power Dissipation (Max) 56W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO-263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 1,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1065210-IPB075N04LG
Ultra Librarian 3D Model Ultra Librarian IPB075N04LG CAD Model

Description

The IPB075N04LG is an N-Channel MOSFET (Metal Oxide) transistor with a drain to source voltage (Vdss) of 40V.

  • Continuous Drain Current (Id) @ 25°C: 50A
  • On-Resistance (Rds On) @ 50A and 10V Vgs: 7.5mOhm
  • Gate Threshold Voltage (Vgs(th)) @ 20μA Id: 2V
  • Suitable for: high power switching applications
  • Mounting: Surface Mountable
  • Package: TO-263-3, D²Pak
  • Manufacturer: Infineon Technologies
  • Series: OptiMOS™ 3
  • Product Status: Active

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