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Same model may have multiple batches, images only for reference.
IPB080N03L G Infineon Technologies
Same model may have multiple batches, images only for reference.

IPB080N03L G

Part No IPB080N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A TO263-3
Datasheet
IPB080N03L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 1900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 47W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 005130-IPB080N03L G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB080N03L G CAD Model

Description

The Infineon Technologies IPB080N03L G is a N-Channel MOSFET transistor that can be mounted using SMD (SMT) technology.

  • Power Dissipation: 47W (Tc)
  • Maximum Drive Voltage: 4.5V, 10V
  • Maximum Rds On: 8 mOhm @ Id, Vgs of 30A, 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 50A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 1900pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Category: Discrete Semiconductor Products
  • Status: active
  • Supply and demand status: balanced

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