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Same model may have multiple batches, images only for reference.
IPB08CNE8N G Real Image
Same model may have multiple batches, images only for reference.

IPB08CNE8N G

Part No IPB08CNE8N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 85V 95A TO263-3
Datasheet
IPB08CNE8N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 85V
Continuous Drain Current at 25°C 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 130μA
Max Gate Charge 99nC @ 10V
Max Input Capacitance 6690pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 95A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045768-IPB08CNE8N G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB08CNE8N G CAD Model

Description

The Infineon Technologies IPB08CNE8NG is an N-channel MOSFET with a drain-source breakdown voltage of 85V and a continuous drain current of 95A (Tc).

  • FET Type: N-Channel
  • Voltage - Drain to Source Breakdown (Vdss): 85 V
  • Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
  • Power Dissipation (Max) @ Tc: 167 W
  • Mounting Type: SMD (SMT)
  • Package / Case: PG-TO263-2
  • Vgs(th) (Max) @ Id: 4V @ 130μA
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 95A, 10V
  • Gate-Source Voltage: ±20V
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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