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Same model may have multiple batches, images only for reference.
IPB147N03L G Real Image
Same model may have multiple batches, images only for reference.

IPB147N03L G

Part No IPB147N03L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A TO263-3
Datasheet
IPB147N03L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 31W (Tc)
Maximum Rds On at Id,Vgs 14.7 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068971-IPB147N03L G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB147N03L G CAD Model

Description

The Infineon Technologies 068971-IPB147N03L G is an N-channel MOSFET transistor designed for use in various applications such as DC-DC converters, motor control, and power supplies.

  • Maximum Power Dissipation: 31W (Tc)
  • Continuous Drain Current: 20A (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO263-2
  • Gate-Source Threshold Voltage: 2.2V @ 250μA
  • Maximum Rds On @ Id, Vgs: 14.7 mOhm @ 20A, 10V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $10.8628 $65.1768
13+ $8.9131 $115.8703
21+ $8.6348 $181.3308
28+ $8.3553 $233.9484
36+ $8.0769 $290.7684
48+ $7.2419 $347.6112
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Availability: 19,700 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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