The 603371-IPB65R600C6 is a N-Channel MOSFET (Metal Oxide) transistor from the CoolMOS™ series.

• Drain to source voltage (Vdss): 650V
• Continuous drain current (Id): 7.3A @ 25°C
• Maximum on-resistance (Rds On): 600mOhm @ 2.1A and 10V gate-source voltage (Vgs)
• Gate threshold voltage (Vgs(th)): 3.5V @ 210μA drain current (Id)
• Maximum power dissipation: 63W
• It is designed in a TO-263-3, D²Pak package and can be surface mounted.
• Gate charge (Qg): 23nC @ 10V gate-source voltage (Vgs)
• Input capacitance (Ciss): 440pF @ 100V drain-source voltage (Vds)
• Operating at a temperature range of -55°C to 150°C, this MOSFET offers reliable performance in demanding environments.
• It is an active product from Infineon Technologies.