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Same model may have multiple batches, images only for reference.
IPB80N06S3L-05 Real Image
Same model may have multiple batches, images only for reference.

IPB80N06S3L-05

Part No IPB80N06S3L-05
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 80A TO-263
Datasheet
IPB80N06S3L-05 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.2V @ 115μA
Max Gate Charge 273nC @ 10V
Max Input Capacitance 13060pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 165W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 69A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045830-IPB80N06S3L-05
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB80N06S3L-05 CAD Model

Description

The Infineon Technologies IPB80N06S3L-05 is an N-channel MOSFET designed for use in discrete semiconductor products. Infineon Technologies IPB80N06S3L-05

  • Channel Type: N-channel
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 165W
  • Continuous Drain Current @ 25°C: 80A
  • Gate-Source Threshold Voltage: 2.2V @ 115μA
  • Maximum Gate Charge: 273nC @ 10V
  • Maximum Input Capacitance: 13060pF @ 25V
  • Maximum Rds On: 4.5 mOhm @ 69A and 10V
  • Case/Package: PG-TO263-3-2
  • Applications: Sensing and Instrumentation, Industrial, Medical, and Automotive

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