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Same model may have multiple batches, images only for reference.
IRFY9140CM
Same model may have multiple batches, images only for reference.

IRFY9140CM

Part No IRFY9140CM
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -10 A
Drain to Source Breakdown Voltage -100 V
Drain to Source Resistance 200 mΩ
Drain to Source Voltage (Vdss) -100 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Maximum Operating Temperature 150 °C
Max Power Dissipation 100 W
Min Operating Temperature -55 °C
Mount Through Hole
Nominal Vgs -4 V
Number of Elements 1
Number of Pins 3
On-State Resistance 200 mΩ
Packaging Bulk
Power Dissipation 100 W
Radiation Hardening No
REACH SVHC No SVHC
RoHS Non-Compliant
Win Source Part Number 995447-IRFY9140CM
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFY9140CM CAD Model

Description

The IRFY9140CM is an RF transistor from Infineon Technologies.

  • Drain to Source Voltage (Vdss): -100V
  • Power Dissipation: 100W
  • Package Type: Through Hole
  • Operating Temperature Range: -55°C to 150°C
  • Continuous Drain Current (ID): -10A
  • Drain to Source Breakdown Voltage: -100V

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