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IPB80N06S407ATMA2

Part No IPB80N06S407ATMA2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO263-3  /  N-Channel 60 V 80A (Tc) 79W (Tc) Surface Mount PG-TO263-3-2
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB80N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPB80N06S407ATMA2,SP001028672,IFEINFIPB80N06S407ATMA2
Standard Package 1,000
Win Source Part Number 1041089-IPB80N06S407ATMA2
Ultra Librarian 3D Model Ultra Librarian IPB80N06S407ATMA2 CAD Model

Description

The Infineon Technologies IPB80N06S407ATMA2 is an N-channel MOSFET that belongs to the OptiMOS™ series.

  • Series: OptiMOS™
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id): 80A (Tc) @ 25°C
  • Maximum On-Resistance (Rds On): 17.5mOhm @ 10V gate-source voltage (Vgs)
  • Packaging: Tape and Reel
  • Operating Temperature: -55°C to 175°C
  • Alternative: IRF1010EZSTRLP and HUF76445S3S

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3500 $60.7500
105+ $1.1078 $116.3190
165+ $1.0731 $177.0615
225+ $1.0385 $233.6625
290+ $1.0039 $291.1310
390+ $0.9000 $351.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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