The IPD075N03L G is a power MOSFET from Infineon Technologies' OptiMOS™ family. This N-channel MOSFET is designed for highly efficient power switching applications.

Applications

• Synchronous rectification in switched-mode power supplies (SMPS)
• DC-DC converters
• Battery management systems
• Power tools

Features

• Low on-resistance (Rds(on)) for reduced conduction losses
• Logic level driving, enabling direct control from microcontrollers
• Avalanche rated, providing robustness against voltage spikes
• 100% Avalanche tested
• Superior thermal resistance for efficient heat dissipation
• Pb-free lead finish; RoHS compliant

Benefits

• Improved energy efficiency in power conversion systems
• Simplified driving circuitry
• Enhanced reliability in demanding applications
• Reduced system size and cost due to efficient thermal management

Additional Details

The IPD075N03L G features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 50A. It is available in a PG-TO252-3 package. The typical Rds(on) is 7.5 mOhm at Vgs=10V. This MOSFET's low gate charge allows for fast switching speeds and minimizes switching losses. It's optimized for high-frequency switching applications. The device is optimized for synchronous rectification. The thermal resistance junction to case is low which makes it suitable for high power application with good heat sinking. The device is suitable for harsh automotive environments.