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Same model may have multiple batches, images only for reference.
IPD180N10N3GATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPD180N10N3GATMA1

Part No IPD180N10N3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MV POWER MOS / Trans MOSFET N-CH 100V 43A Automotive 3-Pin(2+Tab) DPAK T/R
Datasheet
IPD180N10N3GATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.5V @ 33μA
Gate Charge (Qg) (Maximum) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1800pF @ 50V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 71W (Tc)
Rds On (Maximum) @ Id, Vgs 18 mOhm @ 33A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO252-3
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 776861-IPD180N10N3GATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPD180N10N3GATMA1
Introduction Date July 09, 2009
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IPD180N10N3GATMA1 CAD Model

Description

The Infineon Technologies IPD180N10N3GATMA1 is a high-performance MOSFET transistor manufactured by Infineon Technologies.

  • Channel Type: N
  • Maximum Drain-Source Voltage: 100V
  • Continuous Drain Current: 43A
  • Manufactured In: Malaysia
  • Reference Case: TO-252-3, DPak
  • Popularity: Low
  • Supply and Demand Status: Limited
  • Estimated EOL Date: Obsolete / End of Life

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170+ $0.5893 $100.1810
265+ $0.5709 $151.2885
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470+ $0.5340 $250.9800
630+ $0.4788 $301.6440
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