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IPD30N06S2L23ATMA3

Name: IPD30N06S2L23ATMA3
Brand: Infineon Technologies
SKU: 158385
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	IPD30N06S2L23ATMA3
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	MOSFET N-CH 55V 30A TO252-3
Datasheet	IPD30N06S2L23ATMA3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Reel(TR)
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Rds On (Max) @ Id, Vgs	23 mOhm @ 22A, 10V
Vgs(th) (Max) @ Id	2V @ 50μA
Gate Charge (Qg) @ Vgs	42nC @ 10V
Input Capacitance (Ciss) @ Vds	1091pF @ 25V
Power - Max	100W
Operating Temperature Range	-55°C ~ 175°C (TJ)
Mounting Style	SMD/SMT
Package	TO-252-3, DPak (2 Leads + Tab), SC-63
Manufacturer Device Package	PG-TO252-3-11
Win Source Part Number	108656-IPD30N06S2L23ATMA3
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPD30N06S2L23ATMA3 CAD Model

Alternative Products

Description

The Infineon Technologies IPD30N06S2L23ATMA3 is an N-channel MOSFET transistor that is part of the OptiMOS series.

Drain-Source Breakdown Voltage: 55V
Continuous Drain Current: 30A @ 25°C
Gate-Source Threshold Voltage: 2V @ 50μA
Maximum Gate Charge: 42nC @ 10V
Package: TO-252-3
Suitable for: Surface-mount applications
Maximum Power Dissipation: 100W
Ideal for: Use in a wide range of applications

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
60+	$1.0009	$60.0540
145+	$0.8214	$119.1030
220+	$0.7957	$175.0540
300+	$0.7701	$231.0300
390+	$0.7443	$290.2770
520+	$0.6674	$347.0480

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 9,402 pieces

MOQ: 60 pcs

Order Increment : 1 pcs

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