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IPD50N06S4L-08

Name: IPD50N06S4L-08
Brand: Infineon Technologies
SKU: 158395
Availability: InStock
Rating: 4.84 (5 reviews)

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Part No	IPD50N06S4L-08
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	OptiMOS-T2 Power-Transistor
Datasheet	IPD50N06S4L-08 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Manufacturer	Infineon Technologies
Operating Temperature Classification	Military
Rad Hardened	No
Drain-Source On-Volt	60(V)
Number of Elements	1
Drain-Source On-Res	0.0078(ohm)
Mounting	Surface Mount
Package Type	TO-252
Pin Count	2 +Tab
Operating Temp Range	-55C to 175C
Channel Mode	Enhancement
Gate-Source Voltage (Max)	±16(V)
Polarity	N
Type	Power MOSFET
Power Dissipation	71(W)
Continuous Drain Current	50(A)
Win Source Part Number	068998-IPD50N06S4L-08
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IPD50N06S4L-08 CAD Model

Alternative Products

Description

The IPD50N06S4L-08 is a N-Channel Power MOSFET manufactured by Infineon Technologies.

Supply and Demand Status: Balanced
Power Dissipation: 71(W)
Continuous Drain Current: 50(A)
Gate-Source Voltage (Max): ±16(V)
Drain-Source On-Resistance: 0.0078(ohm)

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
15+	$3.5461	$53.1915
35+	$2.9096	$101.8360
54+	$2.8187	$152.2098
74+	$2.7277	$201.8498
95+	$2.6368	$250.4960
127+	$2.3640	$300.2280

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,500 pieces

MOQ: 15 pcs

Order Increment : 1 pcs

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