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IPD60R360P7ATMA1

Part No IPD60R360P7ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A TO252-3  /  N-Channel 600 V 9A (Tc) 41W (Tc) Surface Mount PG-TO252-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 555 pF @ 400 V
Power Dissipation (Max) 41W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD60R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-IPD60R360P7ATMA1,SP001606048,IPD60R360P7ATMA1CT,IPD60R360P7ATMA1DKR,IPD60R360P7ATMA1TR,IFEINFIPD60R360P7ATMA1
Standard Package 2,500
Win Source Part Number 995496-IPD60R360P7ATMA1
Ultra Librarian 3D Model Ultra Librarian IPD60R360P7ATMA1 CAD Model

Description

The Infineon Technologies CoolMOS™ P7 with the Win Source Part Number of 995496-IPD60R360P7ATMA1 is a discrete semiconductor product that is designed to deliver high performance.

  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Popularity: Medium
  • Estimated Production Lead Time: 51 weeks

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2910 $51.6400
85+ $1.2078 $102.6630
130+ $1.1661 $151.5930
185+ $1.0828 $200.3180
245+ $1.0412 $255.0940
305+ $0.9995 $304.8475
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,666 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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