The IPD60R3K4CE is a CoolMOS™ CE series power MOSFET from Infineon Technologies. This is a high-performance superjunction MOSFET designed for high-efficiency SMPS (Switched-Mode Power Supply) applications. It offers reduced switching and conduction losses, enabling higher power density and system efficiency.

Applications:

• Power Factor Correction (PFC) stages
• Flyback Converters
• Forward Converters
• Half-bridge Converters
• Quasi-Resonant Converters

Features:

• 600V CoolMOS™ CE series: Offers high voltage capability with optimized performance.
• Reduced switching losses: Lower Eoss and Qg for increased efficiency.
• Fast body diode: Improves robustness and efficiency in resonant topologies.
• Integrated gate resistor RG: Reduces external components and simplifies design.
• Pb-free plating; RoHS compliant: Environmentally friendly.

Benefits:

• High Efficiency: Reduces power consumption and improves system efficiency.
• Increased Power Density: Allows for smaller and more compact designs.
• Enhanced Reliability: Robust design ensures long-term performance.
• Simplified Design: Integrated gate resistor simplifies the gate drive circuit.
• Cost-Effective Solution: High performance and reduced component count lower system cost.

Additional Details:

The IPD60R3K4CE features a drain-source voltage (V_DS) of 600V and an on-state resistance (R_DS(on)) of 3.4 Ohms. It is available in a PG-TO252 (DPAK) package. The integrated gate resistor RG helps to dampen oscillations and reduce EMI. The fast body diode ensures efficient operation in resonant and soft-switching topologies. The CoolMOS™ CE series offers a good balance between switching speed and on-resistance, making it suitable for a wide range of SMPS applications where both efficiency and cost are important considerations.