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IPD65R950CFDBTMA1

Part No IPD65R950CFDBTMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 3.9A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 200μA
Max Gate Charge 14.1nC @ 10V
Max Input Capacitance 380pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 36.7W (Tc)
Maximum Rds On at Id,Vgs 950 mOhm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045890-IPD65R950CFDBTMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPD65R950CFDBTMA1 CAD Model

Description

The Infineon Technologies PG-TO252-3 MOSFET is a high-performance device that is ideal for use in a wide range of industrial applications.

  • Package: PG-TO252-3
  • Drain-Source Breakdown Voltage: 650V
  • Continuous Drain Current: 3.9A (Tc) @ 25°C
  • Max Gate Charge: 14.1nC @ 10V
  • Max Input Capacitance: 380pF @ 100V
  • Maximum Rds On @ Id,Vgs: 950 mOhm @ 1.5A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0226 $61.3560
140+ $0.8391 $117.4740
215+ $0.8129 $174.7735
295+ $0.7867 $232.0765
380+ $0.7605 $288.9900
510+ $0.6818 $347.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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