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IPD80R4K5P7

Part No IPD80R4K5P7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 4 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 80 pF @ 500 V
Power Dissipation (Max) 13W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-341
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 724021-IPD80R4K5P7
Ultra Librarian 3D Model Ultra Librarian IPD80R4K5P7 CAD Model

Description

The IPD80R4K5P7 is a single N-channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Designed for: discrete semiconductor products
  • Vdss: 800V
  • Id @ 25°C: 1.5A
  • Rds On @ 400mA and 10V: 4.5Ohm
  • Qg @ 10V: 4nC
  • Ciss @ 500V: 80pF
  • Operating Temperature: -55°C to 150°C
  • Status: active product
  • Suitable for: applications that require high voltage and low on-resistance

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5905 $50.1925
210+ $0.4846 $101.7660
320+ $0.4694 $150.2080
445+ $0.4543 $202.1635
570+ $0.4391 $250.2870
765+ $0.3937 $301.1805
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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