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Same model may have multiple batches, images only for reference.
IPF10N03LA Real Image
Same model may have multiple batches, images only for reference.

IPF10N03LA

Part No IPF10N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 30A DPAK
Datasheet
IPF10N03LA Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 11nC @ 5V
Max Input Capacitance 1358pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 52W (Tc)
Maximum Rds On at Id,Vgs 10.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package P-TO252-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1045904-IPF10N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPF10N03LA CAD Model

Description

The Infineon Technologies MOSFET with Win Source Part Number 1045904-IPF10N03LA is a high-power N-Channel MOSFET designed for use in discrete semiconductor products.

  • Power Dissipation: 52W (Tc)
  • Category: discrete semiconductor products
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 30A (Tc)
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 11nC @ 5V
  • Maximum Input Capacitance: 1358pF @ 15V
  • Maximum Rds On @ Id,Vgs: 10.4 mOhm @ 30A, 10V
  • Package: P-TO252-3
  • Mounting: SMD (SMT)

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