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Same model may have multiple batches, images only for reference.
IPI040N06N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPI040N06N3GXKSA1

Part No IPI040N06N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 90A
Datasheet
IPI040N06N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 90μA
Max Gate Charge 98nC @ 10V
Max Input Capacitance 11000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 90A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO262-3
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 137670-IPI040N06N3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPI040N06N3GXKSA1 CAD Model

Description

The Infineon Technologies IPI040N06N3GXKSA1 is an N-channel MOSFET with a drain-source breakdown voltage of 60V and continuous drain current of 90A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current @ 25°C: 90A
  • Package: PG-TO262-3
  • Maximum Power Dissipation: 188W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 90μA
  • Maximum Gate Charge: 98nC @ 10V
  • Applications: power management
  • Popularity: medium
  • Supply and Demand Status: limited

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