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Same model may have multiple batches, images only for reference.
IPP034NE7N3G Real Image
Same model may have multiple batches, images only for reference.

IPP034NE7N3G

Part No IPP034NE7N3G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 100A TO220-3
Datasheet
IPP034NE7N3G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.8V @ 155μA
Max Gate Charge 117nC @ 10V
Max Input Capacitance 8130pF @ 37.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 090064-IPP034NE7N3G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPP034NE7N3G CAD Model

Description

The Infineon Technologies IPP034NE7N3G is an N-channel MOSFET transistor that offers a maximum power dissipation of 214W (Tc).

  • Application: Designed for use in discrete semiconductor products
  • Drive Voltage: 10V
  • Device Status: Active
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO-220-3 package
  • Dimension: TO-220-3 dimension
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 100A (Tc)
  • Maximum Gate Charge: 117nC @ 10V
  • Maximum Input Capacitance: 8130pF @ 37.5V
  • Maximum Rds On @ Id, Vgs: 3.4 mOhm @ 100A, 10V
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
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70+ $1.4413 $100.8910
110+ $1.3963 $153.5930
150+ $1.3512 $202.6800
195+ $1.3062 $254.7090
260+ $1.1711 $304.4860
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