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IPP039N10N5XKSA1

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Part No	IPP039N10N5XKSA1
Manufacturer	Infineon Technologies
Catalog	Transistors – FETs, MOSFETs – Single
Description	MV POWER MOS
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.8V @ 125µA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7000 pF @ 50 V
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Ultra Librarian 3D Model	Ultra Librarian IPP039N10N5XKSA1 CAD Model

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IPP039N10N5XKSA1

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