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IPP042N03LGHKSA1

Part No IPP042N03LGHKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 30 V 70A (Tc) 79W (Tc) Through Hole PG-TO220-3-1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series OptiMOS™
Packaging Tube
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 15 V
Power Dissipation (Max) 79W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP042
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1479629-IPP042N03LGHKSA1
Ultra Librarian 3D Model Ultra Librarian IPP042N03LGHKSA1 CAD Model

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6894 $51.7050
180+ $0.5657 $101.8260
275+ $0.5480 $150.7000
380+ $0.5304 $201.5520
490+ $0.5127 $251.2230
655+ $0.4596 $301.0380
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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