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Same model may have multiple batches, images only for reference.
IPP052N06L3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPP052N06L3GXKSA1

Part No IPP052N06L3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO220-3
Datasheet
IPP052N06L3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 58μA
Max Gate Charge 50nC @ 4.5V
Max Input Capacitance 8400pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 115W (Tc)
Maximum Rds On at Id,Vgs 5 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 135572-IPP052N06L3GXKSA1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP052N06L3GXKSA1 CAD Model

Description

The Infineon Technologies IPP052N06L3GXKSA1 MOSFET is a medium-popularity N-Channel transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 80A at 25°C.

  • Maximum Rds On at Id,Vgs: 5 mOhm @ 80A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.2V @ 58μA
  • Power Dissipation: 115W (Tc)
  • Package: TO-220-3 case

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9362 $60.8530
155+ $0.7682 $119.0710
235+ $0.7442 $174.8870
325+ $0.7202 $234.0650
415+ $0.6962 $288.9230
560+ $0.6242 $349.5520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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