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Same model may have multiple batches, images only for reference.
IPP111N15N3 G Real Image
Same model may have multiple batches, images only for reference.

IPP111N15N3 G

Part No IPP111N15N3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 83A TO220-3
Datasheet
IPP111N15N3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 83A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Gate-Source Threshold Voltage 4V @ 160μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 3230pF @ 75V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 11.1 mOhm @ 83A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO-220-3
Dimension TO-220-3
Win Source Part Number 1045980-IPP111N15N3 G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPP111N15N3 G CAD Model

Description

The Infineon Technologies IPP111N15N3 G is an N-Channel MOSFET transistor with a PG-TO-220-3 package.

  • Package: PG-TO-220-3
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 83A (Tc)
  • Maximum Rds On: 11.1 mOhm @ 83A, 10V
  • Gate-Source Threshold Voltage: 4V @ 160μA
  • Maximum Gate Charge: 55nC @ 10V
  • Maximum Input Capacitance: 3230pF @ 75V
  • Suitable for: discrete semiconductor products

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144+ $2.4093 $346.9392
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