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IPP70N10SL-16

Part No IPP70N10SL-16
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SIPMOS Power-Transistor
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1186362-IPP70N10SL-16
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP70N10SL-16 CAD Model

Description

The IPP70N10SL-16 from Infineon Technologies is a high-performance StrongIRFET™ power MOSFET, designed for a wide range of industrial applications requiring robust and efficient power conversion. This N-channel enhancement mode MOSFET utilizes advanced trench technology to achieve low on-state resistance (RDS(on)) and high current capability, making it suitable for demanding industrial environments.

Applications

  • Motor control in industrial drives and power tools
  • Synchronous rectification in AC-DC and DC-DC converters
  • Uninterruptible Power Supplies (UPS)
  • High current switching applications
  • Battery management systems (BMS)

Features

  • Low on-state resistance (RDS(on)) for reduced power losses
  • High current capability for demanding applications
  • Optimized for high-frequency switching
  • Avalanche rated for ruggedness and reliability
  • Logic level drive capability for easy microcontroller interfacing
  • 175°C operating temperature

Benefits

  • Increased energy efficiency due to low RDS(on)
  • Improved system reliability due to high current and avalanche capability
  • Reduced system size and cost due to high power density
  • Simplified gate drive circuitry with logic level compatibility

Additional Details

The IPP70N10SL-16 features a drain-source voltage (VDS) of 100V and a continuous drain current (ID) of up to 70A (depending on operating conditions and package mounting). The typical gate charge (Qg) is low, contributing to its fast switching behavior. It is available in a PG-TO220 package, offering excellent thermal dissipation capabilities. Its low RDS(on) minimizes conduction losses, improving overall system efficiency, which is essential in applications where power consumption is a critical factor. The logic level gate drive allows for direct interfacing with microcontrollers and other low-voltage control circuits, simplifying system design.

The product's robust design, including avalanche capability, ensures reliability in demanding applications where voltage transients might occur. The high operating temperature makes it suitable for harsh industrial environments. By minimizing power losses and optimizing switching characteristics, the IPP70N10SL-16 helps designers meet stringent energy efficiency standards and improve the performance of their industrial applications. StrongIRFET™ transistors are designed to provide high current and low on-resistance.

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