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IPP80P03P4L04AKSA1

Part No IPP80P03P4L04AKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 80A TO220-3 / Trans MOSFET P-CH 30V 80A Automotive 3-Pin(3+Tab) TO-220 Tube
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Tube
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2V @ 253μA
Gate Charge (Qg) (Maximum) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 11300pF @ 25V
Vgs (Maximum) +5V, -16V
Power Dissipation (Maximum) 137W (Tc)
Rds On (Maximum) @ Id, Vgs 4.4 mOhm @ 80A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO220-3-1
Package TO-220-3
Win Source Part Number 776921-IPP80P03P4L04AKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPP80P03P4L04AKSA1
Introduction Date July 29, 2008
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IPP80P03P4L04AKSA1 CAD Model

Description

The IPP80P03P4L04AKSA1 is a P-Channel Power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. This MOSFET is part of Infineon’s OptiMOS™ series, known for their optimized performance in terms of on-state resistance (RDS(on)) and switching behavior. It is commonly used in applications requiring efficient power management and switching, such as DC-DC converters and load switches.

Applications:

  • DC-DC Converters: Used as a switching element in DC-DC converters for voltage regulation and power management.
  • Load Switches: Functions as an efficient switch to control power to various loads in electronic systems.
  • Battery Management Systems: Implemented in battery management systems for charging and discharging control.
  • Motor Control: Employed in low-power motor control circuits for efficient switching.

Features:

  • P-Channel MOSFET: A P-Channel MOSFET, allowing for easier gate drive in some applications.
  • Low On-State Resistance (RDS(on)): Very low RDS(on) minimizes conduction losses, improving efficiency.
  • Optimized Switching Behavior: Designed for fast and efficient switching, reducing switching losses.
  • Logic Level Compatibility: Can be driven directly by logic-level signals, simplifying circuit design.
  • Avalanche Rated: Robust avalanche capability for increased reliability and protection.

Benefits:

  • High Efficiency: Low RDS(on) and optimized switching minimize power losses, enhancing overall efficiency.
  • Simplified Design: Logic level compatibility simplifies gate drive circuitry, reducing component count.
  • Increased Reliability: Avalanche rating provides added protection against voltage transients.
  • Compact Form Factor: Available in a space-saving package for high-density designs.

Technical Specifications:

The IPP80P03P4L04AKSA1 typically features a drain-source voltage (VDS) rating of -30V, a continuous drain current (ID) rating of around -80A (depending on the case temperature), and a very low RDS(on) value, often in the milliohm range. It is packaged in a standard TO-220 package. Consult the official Infineon datasheet for precise specifications and performance curves.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7836 $52.9704
33+ $3.1045 $102.4485
50+ $3.0075 $150.3750
69+ $2.9105 $200.8245
89+ $2.8135 $250.4015
119+ $2.5224 $300.1656
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,930 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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