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Same model may have multiple batches, images only for reference.
IPU06N03LA Real Image
Same model may have multiple batches, images only for reference.

IPU06N03LA

Part No IPU06N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A TO-251
Datasheet
IPU06N03LA Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO251-3
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069101-IPU06N03LA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPU06N03LA CAD Model

Description

The Infineon Technologies 069101-IPU06N03LA is a MOSFET transistor that is designed for use in various applications.

  • Type: N-channel
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 50A @ 25°C
  • Maximum Rds On at Id,Vgs: 5.9 mOhm @ 30A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Maximum Gate Charge: 22nC @ 5V
  • Maximum Input Capacitance: 2653pF @ 15V
  • Package: PG-TO251-3, with TO-251-3 Short Leads, IPak, TO-251AA dimensions
  • Power Dissipation: 83W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Product Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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