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IPW60R037CSFDXKSA1

Part No IPW60R037CSFDXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CFSD
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 32.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.63mA
Gate Charge (Qg) (Max) @ Vgs 136 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5623 pF @ 400 V
Power Dissipation (Max) 245W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW60R037
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921358-IPW60R037CSFDXKSA1
Ultra Librarian 3D Model Ultra Librarian IPW60R037CSFDXKSA1 CAD Model

Description

The Infineon Technologies IPW60R037CSFDXKSA1 is an active discrete semiconductor product in the transistor category.

  • Type: N-Channel MOSFET (Metal Oxide)
  • Vdss: 600V
  • Id: 54A @ 25°C
  • Rds On: 37mOhm @ 32.6A and 10V Vgs
  • Power Dissipation: 245W @ a case temperature (Tc)
  • Package: Through-hole TO-247-3
  • Supplier Device Package: PG-TO247-3
  • Vgs (Max): ±20V
  • Temperature Range: -55°C to 150°C
  • ECCN: EAR99
  • REACH: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,080 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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