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Same model may have multiple batches, images only for reference.
IPW90R340C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW90R340C3

Part No IPW90R340C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 15A TO-247
Datasheet
IPW90R340C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1mA
Max Gate Charge 94nC @ 10V
Max Input Capacitance 2400pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 208W (Tc)
Maximum Rds On at Id,Vgs 340 mOhm @ 9.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 1046119-IPW90R340C3
Family Name IPW90R340C3
Introduction Date February 21, 2008
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPW90R340C3 CAD Model

Description

The Infineon Technologies IPW90R340C3 is an N-channel MOSFET that can be used in various applications.

  • FET Type: N-Channel
  • Voltage - Drain to Source Breakdown (Vdss): 900 V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
  • Mounting Type: Through Hole
  • Package / Case: PG-TO247-3

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