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IRAS21811

Part No IRAS21811
Manufacturer Infineon Technologies
Catalog OEM Parts (F - I)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 989080-IRAS21811
Categories OEM Parts(F-I)
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRAS21811 CAD Model

Description

The IRAS21811 is a high-voltage, high-speed power MOSFET driver from Infineon Technologies. It is designed to drive N-channel MOSFETs and IGBTs in half-bridge configurations. The driver features integrated bootstrap diode and high and low side gate drivers with a wide input voltage range. It provides reliable and efficient switching for various power conversion applications.

Applications

  • Half-bridge power supplies
  • Motor control
  • Induction heating
  • Welding equipment
  • Class D audio amplifiers

Features

  • Floating channel designed for bootstrap operation up to +600V
  • Gate drive supply range from 10V to 20V
  • High-speed operation
  • 3.3V logic compatible input
  • Integrated bootstrap diode
  • Matched propagation delay for both channels
  • Undervoltage lockout (UVLO) protection
  • Shoot-through protection

Benefits

  • Simplified Half-Bridge Designs: Integrated bootstrap diode reduces external component count and simplifies the design of half-bridge circuits.
  • High Efficiency: Fast switching speeds and optimized gate drive provide efficient power conversion and minimize switching losses.
  • Robust Protection: Undervoltage lockout and shoot-through protection enhance system reliability and prevent device damage.
  • Logic-Level Compatibility: 3.3V logic compatible input enables easy interfacing with microcontrollers and other digital control devices.
  • Reliable Operation: Wide gate drive supply range and high-voltage operation ensure reliable performance in various application conditions.

Technical Specifications

The IRAS21811 has a maximum supply voltage of 600V. The gate drive voltage ranges from 10V to 20V. The peak output current is around 0.35A. The propagation delay is typically around 150ns. The operating temperature range is typically between -40°C to +125°C. The driver is available in a SOIC-8 package.

The IRAS21811 offers a cost-effective and reliable solution for driving power MOSFETs and IGBTs in half-bridge applications. Its integrated features and robust protection mechanisms make it suitable for a wide range of industrial and consumer applications.

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