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IRF1704

Name: IRF1704
Brand: Infineon Technologies
SKU: 604230
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IRF1704
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A⑥) \| MOSFET N-CH 40V 170A TO-220AB
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Status	Obsolete
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	40V
Id - Continuous Drain Current	170A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	4mOhm at 100A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	260nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	6950pF at 25V
Power Dissipation (Maximum)	230W
Temperature Range - Operating	-55°C ~ 200°C
Mounting Style	Through Hole
Supplier Device Package	TO-220AB
Manufacturer Package	TO-220-3
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1186918-IRF1704
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF1704 CAD Model

Alternative Products

Description

The Infineon Technologies MOSFET is a discrete semiconductor product that comes in a through-hole mounting style.

Transistor Polarity: N-Channel
Vds Drain-Source Breakdown Voltage: 40V
Continuous Drain Current: 170A
Maximum Rds on: 4mOhm @ 100A, 10V
Gate Charge (Qg): 260nC @ 10V
Input Capacitance (Ciss): 6950pF @ 25V
Power Dissipation: 230W
Gate Source Voltage (Maximum): ±20V
Status: Obsolete
Supply and Demand: Limited
Manufacturer Pack Quantity: 50

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