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Same model may have multiple batches, images only for reference.
IRF2903ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2903ZPBF

Part No IRF2903ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO-220AB
Datasheet
IRF2903ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 240nC @ 10V
Max Input Capacitance 6320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 290W (Tc)
Maximum Rds On at Id,Vgs 2.4 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046432-IRF2903ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF2903ZPBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel power MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 75A @ 25°C.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A @ 25°C
  • Power Dissipation: 290W (Tc)
  • Drive Voltage: 10V
  • Package: TO-220AB
  • Dimensions: TO-220-3
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 240nC @ 10V
  • Suitable For: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3182 $57.9550
61+ $1.9022 $116.0342
95+ $1.8427 $175.0565
130+ $1.7833 $231.8290
168+ $1.7239 $289.6152
225+ $1.5455 $347.7375
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