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Same model may have multiple batches, images only for reference.
IRF3205L
Same model may have multiple batches, images only for reference.

IRF3205L

Part No IRF3205L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-262
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mfr Infineon Technologies
Series HEXFET®
Packaging Tube
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V
Power Dissipation (Max) 200W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1480228-IRF3205L
Ultra Librarian 3D Model Ultra Librarian IRF3205L CAD Model

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