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Same model may have multiple batches, images only for reference.
IRF3205ZPBF
Same model may have multiple batches, images only for reference.

IRF3205ZPBF

Part No IRF3205ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 75A TO-220AB
Datasheet
IRF3205ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3450pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 6.5 mOhm @ 66A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069263-IRF3205ZPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF3205
Introduction Date December 04, 2003
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF3205ZPBF CAD Model

Description

The IRF3205ZPBF is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 75A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 75A @ 25°C
  • Maximum Rds On: 6.5 mOhm @ 66A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 3450pF @ 25V
  • Operating Temperature: -55°C to 175°C
  • Package Type: TO-220AB
  • Dimension: TO-220-3
  • Category: Discrete Semiconductor Products
  • Manufacturer: Infineon Technologies

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