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IRF5210STRLPBF label picture IRF5210STRLPBF real image249 IRF5210STRLPBF real image250 IRF5210STRLPBF Real Image1 IRF5210STRLPBF Real Image2 IRF5210STRLPBF Real Image3 IRF5210STRLPBF Real Image4
Same model may have multiple batches, images only for reference.
IRF5210STRLPBF label picture IRF5210STRLPBF real image249 IRF5210STRLPBF real image250 IRF5210STRLPBF Real Image1 IRF5210STRLPBF Real Image2 IRF5210STRLPBF Real Image3 IRF5210STRLPBF Real Image4
IRF5210STRLPBF label picture IRF5210STRLPBF real image249 IRF5210STRLPBF real image250 IRF5210STRLPBF Real Image1 IRF5210STRLPBF Real Image2 IRF5210STRLPBF Real Image3 IRF5210STRLPBF Real Image4
Same model may have multiple batches, images only for reference.

IRF5210STRLPBF

Part No IRF5210STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 38A D2PAK
Datasheet
IRF5210STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 2780pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 170W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 38A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017433-IRF5210STRLPBF
Family Name IRF5210S
Introduction Date May 22, 2006
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5210STRLPBF CAD Model

Description

The IRF5210STRLPBF is a P-channel MOSFET transistor from Infineon Technologies.

  • Popularity: high
  • Supply and Demand: balanced
  • Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 38A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Suitable for: high-frequency applications, power switching, and DC-DC converters

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