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Same model may have multiple batches, images only for reference.
IRF540NSTRRPBF
Same model may have multiple batches, images only for reference.

IRF540NSTRRPBF

Part No IRF540NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 33A D2PAK
Datasheet
IRF540NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 1960pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 44 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017438-IRF540NSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF540NSTRRPBF CAD Model

Description

The Infineon Technologies IRF540NSTRRPBF MOSFET is a high-performance N-channel power transistor with a maximum drain-source breakdown voltage of 100V and a maximum continuous drain current of 33A at 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current (25°C): 33A @ 25°C
  • Maximum Power Dissipation: 130W
  • Case/Package: D2PAK package
  • Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6653 $53.2240
165+ $0.6232 $102.8280
250+ $0.6022 $150.5500
360+ $0.5600 $201.6000
465+ $0.5390 $250.6350
580+ $0.5179 $300.3820
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Availability: 19,160 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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