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Same model may have multiple batches, images only for reference.
IRF6613TRPBF label picture
Same model may have multiple batches, images only for reference.

IRF6613TRPBF

Part No IRF6613TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 23A DIRECTFET
Datasheet
IRF6613TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 23A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 63nC @ 4.5V
Max Input Capacitance 5950pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 23A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MT
Dimension DirectFET Isometric MT
Win Source Part Number 132015-IRF6613TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6613TRPBF CAD Model

Description

The Infineon Technologies IRF6613TRPBF is an N-channel MOSFET with a maximum power dissipation of 2.8W (Ta), 89W (Tc) and a drain-source breakdown voltage of 40V.

  • Continuous Drain Current: 23A (Ta), 150A (Tc)
  • Maximum Rds On: 3.4 mOhm @ 23A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 63nC @ 4.5V
  • Supply and Demand Status: Balanced

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