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Same model may have multiple batches, images only for reference.
IRF6620TR1
Same model may have multiple batches, images only for reference.

IRF6620TR1

Part No IRF6620TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 27A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 27A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.45V @ 250μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 4130pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 27A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 110508-IRF6620TR1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRF6620TR1 CAD Model

Description

The Infineon Technologies IRF6620TR1 is an N-channel MOSFET transistor with a Win Source Part Number of 110508-IRF6620TR1.

  • Series: DirectFET MX series
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25 degrees Celsius: 27A (Ta), 150A (Tc)
  • Maximum Rds On at Id, Vgs: 2.7 mOhm @ 27A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 42nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4130pF @ 10V
  • Supply and Demand Status: Balanced
  • Package Size: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4326 $58.4010
330+ $0.3550 $117.1500
505+ $0.3439 $173.6695
695+ $0.3328 $231.2960
900+ $0.3217 $289.5300
1,205+ $0.2884 $347.5220
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Availability: 6,460 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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